IPD110N12N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPD110N12N3 G
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 136 W 120 V Continuous Drain Current (ID):75 A 49 nC
| Parameter | Value |
|---|---|
| Gate Charge | 49 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 75 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 11 mΩ |
| Power Dissipation | 136 W |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 120 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Input capacitance | 3.24 nF |
Stock: 1059
Distributors
pcbx
pcbxUnit Price$1.09498
Ext.Price$1.09498
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.09498 | $1.09498 |
| 10 | $0.90566 | $9.05660 |
| 25 | $0.83028 | $20.75700 |
| 50 | $0.76117 | $38.05850 |
| 100 | $0.69782 | $69.78200 |
| 300 | $0.66895 | $200.68500 |
| 500 | $0.64127 | $320.63500 |
| 1000 | $0.61217 | $612.17000 |